JPS5942695A - 非揮発性で再プログラミング可能な蓄積セルを備えた集積メモリマトリツクス - Google Patents
非揮発性で再プログラミング可能な蓄積セルを備えた集積メモリマトリツクスInfo
- Publication number
- JPS5942695A JPS5942695A JP58048039A JP4803983A JPS5942695A JP S5942695 A JPS5942695 A JP S5942695A JP 58048039 A JP58048039 A JP 58048039A JP 4803983 A JP4803983 A JP 4803983A JP S5942695 A JPS5942695 A JP S5942695A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- storage
- voltage
- cell
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/81—Threshold
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP82102447.8 | 1982-03-24 | ||
| EP82102447A EP0089397B1 (de) | 1982-03-24 | 1982-03-24 | Integrierte Speichermatrix mit nichtflüchtigen, umprogrammierbaren Speicherzellen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5942695A true JPS5942695A (ja) | 1984-03-09 |
| JPH0157439B2 JPH0157439B2 (en]) | 1989-12-05 |
Family
ID=8188946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58048039A Granted JPS5942695A (ja) | 1982-03-24 | 1983-03-24 | 非揮発性で再プログラミング可能な蓄積セルを備えた集積メモリマトリツクス |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4524429A (en]) |
| EP (1) | EP0089397B1 (en]) |
| JP (1) | JPS5942695A (en]) |
| DE (1) | DE3267750D1 (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62164300A (ja) * | 1985-10-29 | 1987-07-20 | テキサス インスツルメンツ インコ−ポレイテツド | 電気的に消去可能なプログラム可能な半導体メモリ・セル |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3587082T2 (de) * | 1984-04-02 | 1993-06-03 | Univ Leland Stanford Junior | Speichersystem fuer analoge daten. |
| IT1221018B (it) * | 1985-03-28 | 1990-06-21 | Giulio Casagrande | Dispositivo per verificare celle di memoria in funzione del salto di soglia ottenibile in fase di scrittura |
| EP0198935A1 (de) * | 1985-04-23 | 1986-10-29 | Deutsche ITT Industries GmbH | Elektrisch umprogrammierbarer Halbleiterspeicher mit Redundanz |
| JPS62177799A (ja) * | 1986-01-30 | 1987-08-04 | Toshiba Corp | 半導体記憶装置 |
| US6226200B1 (en) * | 1999-11-17 | 2001-05-01 | Motorola Inc. | In-circuit memory array bit cell threshold voltage distribution measurement |
| US7850378B1 (en) * | 2005-05-13 | 2010-12-14 | Apple Inc. | Webbed keyboard assembly |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| JP6496686B2 (ja) * | 2016-07-04 | 2019-04-03 | 株式会社三共 | 遊技機 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4127901A (en) * | 1977-08-03 | 1978-11-28 | Sperry Rand Corporation | MNOS FET memory retention characterization test circuit |
| US4181980A (en) * | 1978-05-15 | 1980-01-01 | Electronic Arrays, Inc. | Acquisition and storage of analog signals |
| US4223394A (en) * | 1979-02-13 | 1980-09-16 | Intel Corporation | Sensing amplifier for floating gate memory devices |
| JPS57141097A (en) * | 1981-02-25 | 1982-09-01 | Toshiba Corp | Storage circuit |
| US4441168A (en) * | 1982-01-13 | 1984-04-03 | Sperry Corporation | Storage logic/array (SLA) circuit |
-
1982
- 1982-03-24 EP EP82102447A patent/EP0089397B1/de not_active Expired
- 1982-03-24 DE DE8282102447T patent/DE3267750D1/de not_active Expired
-
1983
- 1983-03-04 US US06/472,349 patent/US4524429A/en not_active Expired - Fee Related
- 1983-03-24 JP JP58048039A patent/JPS5942695A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62164300A (ja) * | 1985-10-29 | 1987-07-20 | テキサス インスツルメンツ インコ−ポレイテツド | 電気的に消去可能なプログラム可能な半導体メモリ・セル |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3267750D1 (en) | 1986-01-16 |
| JPH0157439B2 (en]) | 1989-12-05 |
| EP0089397A1 (de) | 1983-09-28 |
| US4524429A (en) | 1985-06-18 |
| EP0089397B1 (de) | 1985-12-04 |
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